李鸿，女，副教授，博士后，硕士研究生导师

通信地址：北京市石景山区晋元庄路5号北方工业大学威廉希尔

邮编：100144

邮箱地址：lihong@ncut.edu.cn

个人简历

2020.03-至今北方工业大学，副教授

2015.05-2020.02北方工业大学，讲师

2012.08-2014.07丹麦计术大学，物理学院，博士后

2007.09-2012.06北京大学，物理学院，博士

2003.09-2007.06吉林大学，物理学院，学士

教授课程

本科生课程：《大学化学》、《材料计算技术》

研究生课程：《材料设计与计算方法》、《材料计算技术应用》

主要研究方向

1. 二维材料表界面的第一性原理计算

2. 新型纳米器件的量子输运计算

近年来主要主持的科研项目

1. 基于二维材料的隧穿场效应管的理论设计， 国家自然科学基金，2018-2020

2. 亚5纳米二维陡坡晶体管的电极优化设计， 北京自然基金面上，2021-2023

近年来发表的主要论文

1)Hong Li,Yuhang Liu, Shuai Sun, Fengbin Liu, Jing Lu, Scaling limits of monolayer AlN and GaN MOSFETs, Applied Surface Science, 2023, 634，157613. (SCI影响因子: 6.182)

2)Hong Li, Qiaohui Wang, Lina Si, Zhaoliang Dou, Hongjuan Yan, Ye Yang, Gang Zhou, Tao Qing, Shaohua Zhang, Fengbin Liu, Lubricity Characters in van der Waals SnS2/Graphene and SnS2/NbTe2 Ohmic Interface, Tribology Letters, 2023, 71:13.(SCI影响因子: 3.2)

3) Qiaohui Wang (研究生),Hong Li,Lina Si, Zhaoliang Dou, Hongjuan Yan, Ye Yang, Fengbin Liu, Electronic contacts and lubricity characteristics between monolayer WSe2and Zr2C, Zr2CY2 (Y = F or OH), Mater. Today. Comm, 35, 2023, 105724. (SCI影响因子: 3.2)

4)Hong Li, Qida Wang, Fengbin Liu, Jing Lu, Lifting on-state currents for GeS-based tunneling field-effect transistorswith electrode optimization, Applied Surface Science, 2022, 602, 154297. (SCI影响因子: 6.182)

5)Hong Li, Jiakun Liang, Qida Wang, Fengbin Liu, Gang Zhou, Tao Qing, Shaohua Zhang, and Jing Lu, Device performance limit of monolayer SnSe2 MOSFET, Nano Research, 2022, 15, 2522-2530. (SCI影响因子: 8.183)

6) Yuhang Liu (研究生),Hong Li, Fengbin Liu, Shuai Sun, Gang Zhou, Tao Qing, Shaohua Zhang, Jing Lu, Engineering Schottky barrier in vertical graphene/InN heterostructure, Solid State Comm, 348-349, 2022, 114770. (SCI影响因子: 1.521)

7) Qida Wang (研究生), Peipei Xu,Hong Li, Fengbin Liu, Shuai Sun, Gang Zhou, Tao Qing, Shaohua Zhang, Jing Lu, Device simulation of GeSe homojunction and vdW GeSe/GeTe heterojunction TFETs for high‑performance application, Journal of Computational Electronics, 2022, 21:401–410 (SCI影响因子: 1.5)

8) Hong Li, Qida Wang, Peipei Xu, and Jing Lu,Van der Waals BP/InSe Heterojunction for Tunneling Field-Effect Transistors, J Mater Sci, 2021, 56, 8563–8574. (SCI影响因子: 3.553)

9) Jiakun Liang (研究生),Hong Li, Fengbin Liu, and Jing Lu,Layer-controlled Low-power Tunneling Transistors based on SnS Homojunction,Advanced Theory and Simulations, 2021.(SCI影响因子: 2.951)

10) Hong Li, Jiakun Liang, Peipei Xu, Jing Luo and Fengbin Liu, Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors, RSC Adv., 2020, 10, 20801 (SCI影响因子: 3.119)

11) Peipei Xu (研究生), Jiakun Liang,Hong Li, Fengbin Liu, Jun Tie, Zhiwei Jiao, Jing Luo and Jing Lu, Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors, RSC Adv., 2020, 10, 16071. (SCI影响因子: 3.119)

12) Hong Li, Peipei Xu, Jiakun Liang, Fengbin Liu, Jing Luo, and Jing Lu, Ohmic contact in graphene/SnSe2 Van Der Waals heterostructures and its device performance from ab initio simulation, J Mater Sci, 2020, 55, 4321–4331. (SCI影响因子: 3.553)

13) Hong Li, Peipei Xu, Jing Lu, Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides, Nanoscale, 2019, 11, 23392. (SCI影响因子: 6.895)

14) Hong Li, Jing Lu, Sub-10 nm Vertical Tunneling Transistors based on Layered Black Phosphorene Homojunction, Applied Surface Science, 2019, 465，895-901. (SCI影响因子: 6.182)

15) Hong Li, Peipei Xu, Lin Xu, Zhiyong Zhang, and Jing Lu, Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene, Semiconductor Science and Technology, 2019, 34, 085006. (SCI影响因子: 2.361)

16) Hong Li, Jun Tie, Jingzhen Li, Meng Ye, Han Zhang, Yuanyuan Pan, Yangyang Wang, Ruge Quhu, Feng Pan, Jing Lu, High-performance sub-10-nm monolayer black phosphorene tunneling transistors, Nano Research, 2018, 11, 2658-2668. (SCI影响因子: 8.183)

17) Hong Li, Bowen Shi, Yuanyuan Pan, Jingzhen Li, Lin Xu, Liangqiang Xu, Zhiyong Zhang, Feng Pan, and Jing Lu, Sub-5nm monolayer black phosphorene tunneling transistors, Nanotechnology, 2018, 29, 485202. (SCI影响因子: 3.551)

18) Hong Li, Xiang Xiao, Jun Tie, Jing Lu, Electronic and magnetic properties of bare armchair BC2N nanoribbons. J. Mag & Mag Mater. 2017,426, 641. (SCI影响因子: 2.717)

19) Hong Li, Xiang Xiao, Jun Tie, Jing Lu，Electronic and magnetic properties tuning of armchair BC2N nanoribbons by edge modification. Solid State Comm, 257, 27-31, 2017. (SCI影响因子: 1.521)

20) Hong Li, Xiang Xiao, Jun Tie, Jing Lu, Half metallicity in bare BC2N nanoribbons with zigzag edges. Phys. Lett. A, 2017, 381,1820-1824. (SCI影响因子: 2.278 )

21) Xiang Xiao (研究生),Hong Li, Jun Tie, Jing Lu, Effect of edge modification on the zigzag BC2N nanoribbons. Chem. Phys. Lett, 2016, 658, 234. (SCI影响因子: 2.029)